MJD42C1G PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Excellent Safe Operating Area. Collector-Emitter Saturation Voltage- : VCE(sat)= -1. Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number: MJD42C1G
Manufacturer: INCHANGE
File Size: 206.19 KB
Datasheet: MJD42C1G-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-base Voltage -5 V IC Collector Current-Continuous

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