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MJD42C1G - PNP Transistor

MJD42C1G Description

isc Silicon PNP Power Transistor .
Excellent Safe Operating Area. Collector-Emitter Saturation Voltage- : VCE(sat)= -1. Minimum Lot-to-Lot variations for.

MJD42C1G Applications

* Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-base Voltage -5 V IC Collector Current-Continuous

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Datasheet Details

Part number
MJD42C1G
Manufacturer
INCHANGE
File Size
206.19 KB
Datasheet
MJD42C1G-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE MJD42C1G-like datasheet