Datasheet Details
- Part number
- MJD44E3
- Manufacturer
- Inchange Semiconductor
- File Size
- 265.30 KB
- Datasheet
- MJD44E3-InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
MJD44E3 Description
isc Silicon NPN Darlington Power Transistor MJD44E3 .
High DC Current Gain
: hFE = 1000(Min)@ IC= 5A.
Low Collector-Emitter Saturation Voltage
: VCE(sat) = 1.
Minimum Lot-to-L.
MJD44E3 Applications
* Designed for general-purpose amplifier and low-speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
Collector Power Dissipation @TC=25℃ PC Colle
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