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MJD44E3

Silicon NPN Power Transistor

MJD44E3 General Description


*High DC Current Gain : hFE = 1000(Min)@ IC= 5A
*Low Collector-Emitter Saturation Voltage : VCE(sat) = 1.5V(Max)@ IC= 5A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for general-purpose amplifier and low-speed switching a.

MJD44E3 Datasheet (265.30 KB)

Preview of MJD44E3 PDF

Datasheet Details

Part number:

MJD44E3

Manufacturer:

Inchange Semiconductor

File Size:

265.30 KB

Description:

Silicon npn power transistor.

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