MJD44E3 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor MJD44E3 .
High DC Current Gain : hFE = 1000(Min)@ IC= 5A. Low Collector-Emitter Saturation Voltage : VCE(sat) = 1. Minimum Lot-to-L.

📥 Download Datasheet

MJD44E3 Datasheet Preview — Preview of MJD44E3 PDF

Datasheet Specifications

Part number: MJD44E3
Manufacturer: Inchange Semiconductor
File Size: 265.30 KB
Datasheet: MJD44E3-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous Collector Power Dissipation @TC=25℃ PC Colle

MJD44E3 Distributors

📁 Related Datasheet

MJD44E3-1 MJD44E3T4 MJD44 MJD44H11A MJD44H11G MJD44H11T4

📌 All Tags

MJD44E3 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor MJD44E3-like datasheet