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MJD45H11

Silicon PNP Power Transistor

MJD45H11 General Description


*Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A
*Fast Switching Speeds
*Complement to Type MJD44H11
*DPAK for Surface Mount Applications
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for gen.

MJD45H11 Datasheet (243.16 KB)

Preview of MJD45H11 PDF

Datasheet Details

Part number:

MJD45H11

Manufacturer:

Inchange Semiconductor

File Size:

243.16 KB

Description:

Silicon pnp power transistor.

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MJD45H11 Silicon PNP Power Transistor Inchange Semiconductor

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