MJD44H11 - Silicon NPN Power Transistor
*Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A *Fast Switching Speeds *Complement to Type MJD45H11 *DPAK for Surface Mount Applications *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for ge
