MJD47 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors INCHANGE Semiconductor MJD47 .
DC Current Gain -hFE = 30~150@ IC= 0. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min). Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number: MJD47
Manufacturer: Inchange Semiconductor
File Size: 189.75 KB
Datasheet: MJD47-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V

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MJD47 Silicon NPN Power Transistor Inchange Semiconductor

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