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MJD47 - Silicon NPN Power Transistor

MJD47 Description

isc Silicon NPN Power Transistors INCHANGE Semiconductor MJD47 .
DC Current Gain -hFE = 30~150@ IC= 0. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min). Minimum Lot-to-Lot variations for.

MJD47 Applications

* Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V

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Datasheet Details

Part number
MJD47
Manufacturer
Inchange Semiconductor
File Size
189.75 KB
Datasheet
MJD47-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Inchange Semiconductor MJD47-like datasheet