MJD41C Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors .
DC Current Gain -hFE = 30(Min)@ IC= 0. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Complement to Type MJD42C. D.

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Datasheet Specifications

Part number: MJD41C
Manufacturer: Inchange Semiconductor
File Size: 240.79 KB
Datasheet: MJD41C-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Col

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MJD41C Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor MJD41C-like datasheet