Datasheet Details
- Part number
- MJD41C
- Manufacturer
- Inchange Semiconductor
- File Size
- 240.79 KB
- Datasheet
- MJD41C-InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
MJD41C Description
isc Silicon NPN Power Transistors .
DC Current Gain -hFE = 30(Min)@ IC= 0.
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min).
Complement to Type MJD42C.
D.
MJD41C Applications
* Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS
* Designed for use in general purpose amplifer and low speed
switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Col
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