MJD42C Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistors .
DC Current Gain -hFE = 30(Min)@ IC= -0. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min). Complement to Type MJD41C.

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Datasheet Specifications

Part number: MJD42C
Manufacturer: Inchange Semiconductor
File Size: 241.03 KB
Datasheet: MJD42C-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO

MJD42C Distributors

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MJD42C Silicon PNP Power Transistor Inchange Semiconductor

Inchange Semiconductor MJD42C-like datasheet