MJD45H11G Datasheet, Transistors, ON Semiconductor

MJD45H11G Features

• Transistors
• Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (“
• 1” Suffix)
• Electrically Simila

PDF File Details

Part number:

MJD45H11G

Manufacturer:

ON Semiconductor ↗

File Size:

290.10kb

Download:

📄 Datasheet

Description:

Complementary power transistors.

MJD45H11G Application

• Applications MJD44H11 (NPN), MJD45H11 (PNP) Designed for general purpose power and switching such as output or driver stages in applications such a

TAGS

MJD45H11G

ON Semiconductor

📁 Related Datasheet

MJD45H11 - Silicon PNP Power Transistor (Inchange Semiconductor)
isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Comple.

MJD45H11 - Complementary Power Transistors (Kexin)
SMD Type Transistors Complementary Power Transistors MJD45H11 Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching.

MJD45H11 - PNP Epitaxial Silicon Transistor (Fairchild)
MJD45H11 — PNP Epitaxial Silicon Transistor April 2015 MJD45H11 PNP Epitaxial Silicon Transistor Features • General-Purpose Power and Switching such.

MJD45H11 - Complementary power transistors (ST Microelectronics)
MJD44H11, MJD45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-2.

MJD45H11 - SILICON POWER TRANSISTORS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H11/D Complementary Power Transistors • • • • • • • MJD44H11 * PNP MJD45H11 * *M.

MJD45H11 - 8A PNP high power bipolar transistor (nexperia)
MJD45H11 80 V, 8 A PNP high power bipolar transistor 28 May 2019 Preliminary data sheet 1. General description PNP high power bipolar transistor i.

MJD45H11 - Complementary Power Transistors (ON Semiconductor)
Complementary Power Transistors DPAK for Surface Mount Applications MJD44H11 (NPN), MJD45H11 (PNP) Designed for general purpose power and switching s.

MJD45H11A - 8A PNP high power bipolar transistor (nexperia)
MJD45H11A 80 V, 8 A PNP high power bipolar transistor 28 May 2019 Product data sheet 1. General description PNP high power bipolar transistor in a p.

MJD45H11T4 - Low voltage complementary power transistors (STMicroelectronics)
MJD44H11T4, MJD45H11T4 Datasheet Low voltage plementary power transistors Features TAB 23 1 DPAK C (2, TAB) C (2, TAB) • Low collector-emitter .

MJD45H11T4-A - (MJD44H11T4-A / MJD44H11T4-A) Complementary power transistors (ST Microelectronics)
.. MJD44H11T4-A MJD45H11T4-A Complementary power transistors Features ■ ■ ■ ■ . The devices are qualified for automotive applicat.