MJD13003 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min. Collector Saturation Voltage : VCE(sat) = 1.

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Datasheet Specifications

Part number: MJD13003
Manufacturer: INCHANGE
File Size: 231.66 KB
Datasheet: MJD13003-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM

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