Datasheet Details
- Part number
- MJD122
- Manufacturer
- Inchange Semiconductor
- File Size
- 250.35 KB
- Datasheet
- MJD122-InchangeSemiconductor.pdf
- Description
- Silicon NPN Darlington Power Transistor
MJD122 Description
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 .
High DC current gain.
Built-in a damper diode at E-C.
Monolithic Construction With Built-in Base-Emitter Shunt Resistors.
Complementa.
MJD122 Applications
* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICm IB
PC
TJ Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous
Collector Curre
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