MJD122 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 .
High DC current gain. Built-in a damper diode at E-C. Monolithic Construction With Built-in Base-Emitter Shunt Resistors. Complementa.

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Datasheet Specifications

Part number: MJD122
Manufacturer: Inchange Semiconductor
File Size: 250.35 KB
Datasheet: MJD122-InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICm IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Curre

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MJD122 Silicon NPN Darlington Power Transistor Inchange Semiconductor

Inchange Semiconductor MJD122-like datasheet