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MJD122 - Silicon NPN Darlington Power Transistor

MJD122 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 .
High DC current gain. Built-in a damper diode at E-C. Monolithic Construction With Built-in Base-Emitter Shunt Resistors. Complementa.

MJD122 Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICm IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Curre

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Datasheet Details

Part number
MJD122
Manufacturer
Inchange Semiconductor
File Size
250.35 KB
Datasheet
MJD122-InchangeSemiconductor.pdf
Description
Silicon NPN Darlington Power Transistor

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Silicon NPN Darlington Power Transistor Inchange Semiconductor
Inchange Semiconductor MJD122-like datasheet