Datasheet Details
Part number:
MJD122
Manufacturer:
Inchange Semiconductor
File Size:
250.35 KB
Description:
Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 DESCRIPTION *High DC current gain *Built-in a damper diode at E-C *Monolithic Construction With Built-in Base-Emitter Shunt Resistors *Complementary Pairs Simplifies Designs *Minimum Lot-to-Lot variation
MJD122-InchangeSemiconductor.pdf
MJD122, Silicon NPN Darlington Power Transistor
*High DC current gain *Built-in a damper diode at E-C *Monolithic Construction With Built-in Base-Emitter Shunt Resistors *Complementary Pairs Simplifies Designs *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for ge
MJD122 Distributor
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