MJD127T4

Complementary power Darlington transistors

ST Microelectronics

MJD127T4 Features

* Low collector-emitter saturation voltage

* Integrated antiparallel collector-emitter diode Applications

* General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting

MJD127T4 General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 1 DPAK Figure 1. Internal schematic diagrams Table 1. Device summary Or.

MJD127T4 Datasheet (356.28 KB)