MJD31B Datasheet - ST Microelectronics

MJD31B - Complementary Silicon Power Transistors

The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs.

They are manufactured using Epitaxial Base technology for cost-effective performance.

DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM

Datasheet Details

MJD31B

65.37 KB

Complementary silicon power transistors.

📁 Related Datasheet

📌 All Tags