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MJD122

Complementary power Darlington transistors

MJD122 Features

* Low collector-emitter saturation voltage

* Integrated antiparallel collector-emitter diode Applications

* General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting

MJD122 General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 1 DPAK Figure 1. Internal schematic diagrams Table 1. Device summary Or.

MJD122 Datasheet (356.29 KB)

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Datasheet Details

Part number:

MJD122

Manufacturer:

STMicroelectronics ↗

File Size:

356.29 KB

Description:

Complementary power darlington transistors.

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MJD122 Complementary power Darlington transistors ST Microelectronics

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