Datasheet4U Logo Datasheet4U.com

MJD3055 Datasheet - ST Microelectronics

MJD3055 Complementary Silicon Power Transistors

The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-.

MJD3055_STMicroelectronics.pdf

Preview of MJD3055 PDF
MJD3055 Datasheet Preview Page 2 MJD3055 Datasheet Preview Page 3

Datasheet Details

Part number:

MJD3055

Manufacturer:

STMicroelectronics ↗

File Size:

186.35 KB

Description:

Complementary silicon power transistors.

📁 Related Datasheet

MJD3055 Silicon NPN Power Transistor (Inchange Semiconductor)

MJD3055 General Purpose Amplifier (Fairchild)

MJD3055 Complementary Power Transistors (ON)

MJD3055 SILICON POWER TRANSISTORS (Motorola)

MJD3055 Epitaxial Planar NPN Transistor (GME)

MJD3055 SMD Power Transistor (TAITRON)

MJD3055T4 Low voltage NPN power transistor (STMicroelectronics)

MJD31 Complementary Power Transistors (Kexin)

TAGS

MJD3055 MJD3055 Complementary Silicon Power Transistors ST Microelectronics

MJD3055 Distributor