MJD31CH-Q

3A NPN high power bipolar transistor

nexperia

* High thermal power dissipation capability

* High energy efficiency due to less heat generation

* High current gain at VCE = 60 V

* Electrically similar to popular MJD31 series

* Low collector emitter saturation voltage

* Fast switching speeds

MJD31CH-Q

220.09 KB

3a npn high power bipolar transistor.

📁 Related Datasheet

MJD31C NPN Transistor (SeCoS)

MJD31C NPN Transistor (Diodes)

MJD31C Silicon NPN Power Transistor (Inchange Semiconductor)

MJD31C Complementary Power Transistors (Kexin)

MJD31C COMPLEMENTARY PLASTIC POWER TRANSISTORS (CDIL)

MJD31C SILICON POWER TRANSISTORS (ON)

MJD31C Low voltage NPN power transistor (ST Microelectronics)

MJD31C NPN Epitaxial Silicon Transistor (Fairchild)

MJD31C SILICON POWER TRANSISTORS (Motorola)

MJD31C 3A NPN transistor (nexperia)

TAGS

MJD31CH-Q NPN high power bipolar transistor nexperia

Image Gallery