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MJD31CH-Q - 3A NPN high power bipolar transistor

MJD31CH-Q Description

MJD31CH-Q 100 V, 3 A NPN high power bipolar transistor 18 May 2021 Product data sheet 1.General .
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

MJD31CH-Q Features

* High thermal power dissipation capability
* High energy efficiency due to less heat generation
* High current gain at VCE = 60 V
* Electrically similar to popular MJD31 series
* Low collector emitter saturation voltage
* Fast switching speeds

MJD31CH-Q Applications

* 3. Applications
* Power management
* Load switch
* Linear mode voltage regulator
* Constant current drive backlighting application
* Motor drive
* Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO coll

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NPN high power bipolar transistor nexperia
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