MJD31CH-Q Datasheet - nexperia

MJD31CH-Q 3A NPN high power bipolar transistor

MJD31CH-Q Features

* High thermal power dissipation capability

* High energy efficiency due to less heat generation

* High current gain at VCE = 60 V

* Electrically similar to popular MJD31 series

* Low collector emitter saturation voltage

* Fast switching speeds

Datasheet Details

MJD31CH-Q

220.09 KB

3a npn high power bipolar transistor.

MJD31CH-Q Distributor

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