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MJD2955 Datasheet - ST Microelectronics

MJD2955 Complementary Silicon Power Transistors

The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-.

MJD2955_STMicroelectronics.pdf

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Datasheet Details

Part number:

MJD2955

Manufacturer:

STMicroelectronics ↗

File Size:

186.35 KB

Description:

Complementary silicon power transistors.

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MJD2955 MJD2955 Complementary Silicon Power Transistors ST Microelectronics