Datasheet4U Logo Datasheet4U.com

MJD127 Complementary power Darlington transistors

MJD127 Description

MJD122 MJD127 Complementary power Darlington transistors .
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

MJD127 Features

* Low collector-emitter saturation voltage

📥 Download Datasheet

Preview of MJD127 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • MJD127S - PNP Transistor (MCC)
  • MJD122 - Epitaxial Planar NPN Transistor (GME)
  • MJD128 - Silicon PNP Darlington Power Transistor (Inchange Semiconductor)
  • MJD128T4G - Complementary Darlington Power Transistor (ON Semiconductor)
  • MJD112 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • MJD112L - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • MJD112T4 - Complementary power Darlington transistors (STMicroelectronics)
  • MJD117 - PNP Silicon Darlington Transistor (Fairchild Semiconductor)

📌 All Tags

ST Microelectronics MJD127-like datasheet