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MJD32C Datasheet - Inchange Semiconductor

MJD32C Silicon PNP Power Transistor

*DC Current Gain -hFE = 25(Min)@ IC= -1A *Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) *Complement to Type MJD31C *DPAK for Surface Mount Applications *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed f.

MJD32C-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

MJD32C

Manufacturer:

Inchange Semiconductor

File Size:

250.20 KB

Description:

Silicon pnp power transistor.

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