Datasheet4U Logo Datasheet4U.com

MJD32C - Silicon PNP Power Transistor

MJD32C Description

isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD32C .
DC Current Gain -hFE = 25(Min)@ IC= -1A. Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min). Complement to Type MJD31C. DPA.

MJD32C Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for use in general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Ba

📥 Download Datasheet

Preview of MJD32C PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MJD32C
Manufacturer
Inchange Semiconductor
File Size
250.20 KB
Datasheet
MJD32C-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

📁 Related Datasheet

  • MJD32CA - 3A PNP high power bipolar transistor (nexperia)
  • MJD32CQ - PNP Transistor (Diodes)
  • MJD32CT4 - Low voltage PNP power transistor (STMicroelectronics)
  • MJD32CT4-A - Automotive-grade low voltage PNP power transistor (STMicroelectronics)
  • MJD32CUQ - 100V PNP MEDIUM POWER TRANSISTOR (Diodes)
  • MJD32 - Complementary Power Transistors (Kexin)
  • MJD32B - COMPLEMENTARY SILICON POWER TRANSISTORS (ST Microelectronics)
  • MJD3055T4 - Low voltage NPN power transistor (STMicroelectronics)

📌 All Tags

Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor MJD32C-like datasheet