MJD31C Datasheet - Inchange Semiconductor

Datasheet Details

Part number:

MJD31C

Manufacturer:

Inchange Semiconductor

File Size:

250.13 KB

Description:

Silicon NPN Power Transistor

isc Silicon NPN Power Transistors DESCRIPTION *DC Current Gain -hFE = 25(Min)@ IC= 1A *Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) *Complement to Type MJD32C *DPAK for Surface Mount Applications *Minimum Lot-to-Lot variations for robust device performance and rel

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MJD31C, Silicon NPN Power Transistor

*DC Current Gain -hFE = 25(Min)@ IC= 1A *Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) *Complement to Type MJD32C *DPAK for Surface Mount Applications *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for

MJD31C Distributor

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MJD31C Silicon NPN Power Transistor Inchange Semiconductor

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