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MJD31C

Silicon NPN Power Transistor

MJD31C General Description


*DC Current Gain -hFE = 25(Min)@ IC= 1A
*Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min)
*Complement to Type MJD32C
*DPAK for Surface Mount Applications
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for.

MJD31C Datasheet (250.13 KB)

Preview of MJD31C PDF

Datasheet Details

Part number:

MJD31C

Manufacturer:

Inchange Semiconductor

File Size:

250.13 KB

Description:

Silicon npn power transistor.

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MJD31C Silicon NPN Power Transistor Inchange Semiconductor

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