MJD32CQ - PNP Transistor

Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Features

BVCEO > -100V.
IC = -3A high Continuous Collector Current.
ICM = -5A Peak Pulse Current.
Ideal for Power Switching or Amplification.

Diodes Incorporated

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MJD32CQ PNP Transistor by Diodes - Datasheet Preview — Datasheet preview – MJD32CQ

Datasheet Details

Part number	MJD32CQ
Manufacturer	Diodes Incorporated
File Size	417.08 KB
Description	PNP Transistor
Datasheet	MJD32CQ Datasheet
Additional preview pages of the MJD32CQ datasheet.

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Full PDF Text Transcription

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NOT RECOMMENDED FOR NEW DESIGN USE MJD32CUQ Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > -100V  IC = -3A high Continuous Collector Current  ICM = -5A Peak Pulse Current  Ideal for Power Switching or Amplification Applications  Complementary NPN Type: MJD31CQ  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.

Published: Mar 17, 2017 |