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LB123D TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

LB123D Description

www.DataSheet4U.com DC COMPONENTS CO., LTD.R LB123D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descript.
Designed for high voltage, high speed switching circuits, and amplifier applications .

LB123D Applications

* . TO-126ML .163(4.12) .153(3.87) .146(3.70) .136(3.44) Pinning 1 = Emitter 2 = Collector 3 = Base .044(1.12) .034(0.87) .060(1.52) .050(1.27) .148(3.75) .138(3.50) .300(7.62) .290(7.37) 1 2 3 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitt

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Datasheet Details

Part number
LB123D
Manufacturer
Dc Components
File Size
244.22 KB
Datasheet
LB123D_DcComponents.pdf
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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TECHNICAL SPECIFICATIONS NPN EPITAXIAL PLANAR TRANSISTOR Dc Components
Dc Components LB123D-like datasheet