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DP3N10 N-Channel MOSFET

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Description

DP3N10 N-Channel 100V(D.S)MOSFT MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max.ID (A)a 0.126 at VGS = 10 V 3.1 100 0.134 at VGS = 6 V 2.9 0.

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Preview of DP3N10 PDF

Features

* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

Applications

* DC/DC Converters / Boost Converters
* Load Switch
* LED Backlighting in LCD TVs
* Power Management for Mobile Computing G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Co

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DP3N10 N-Channel MOSFET Developer Microelectronics
Developer Microelectronics DP3N10-like datasheet
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