DMN601DMK N-Channel MOSFET

Diodes Incorporated

Description

NEW PRODUCT Product Summary V(BR)DSS 60V RDS(ON) Max 2.4Ω @ VGS = 10V 4.0Ω @ VGS = 4V ID Max TA = 25°C 510mA 390mA .
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, ma.

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Datasheet Specifications

Part number: DMN601DMK
Manufacturer: DIODES ↗ Incorporated
File Size: 492.82 KB
Datasheet: DMN601DMK_DiodesIncorporated.pdf
Description: N-Channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected Up To 2kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qua

Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* DC-DC Converters
* Power Management Functions
* Analog Switch DMN601DMK DUAL N-CHANNEL

DMN601DMK Distributors

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DMN601DMK N-Channel MOSFET Diodes Incorporated

Diodes Incorporated DMN601DMK-like datasheet