DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated

Description

DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 2.0Ω @ VGS = 10V 3.0Ω @ VGS = 4.5V ID Max TA = +25°C 300mA 245mA .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo.

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Datasheet Specifications

Part number: DMN601WK
Manufacturer: DIODES ↗ Incorporated
File Size: 368.57 KB
Datasheet: DMN601WK_DiodesIncorporated.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low On-Resistance: RDS(ON)
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Fre

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
* Motor controls
* Power-management functions

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DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET Diodes Incorporated

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