* Low On-Resistance: RDS(ON)
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Fre
DMN601WK Datasheet (368.57 KB)
DMN601WK
DIODES ↗ Incorporated
368.57 KB
N-channel enhancement mode mosfet.
DMN601WK
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
2.0Ω @ VGS = 10V 3.0Ω @ VGS = 4.5V
ID Max TA = +25°C
300mA
245mA
.
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FEATURES ·Drain Current –ID= 43A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
:.
