DMN601VKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Diodes

Description

DMN601VKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS = 10V 3Ω @ VGS = 4.5V ID Max TA =.
and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.

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Datasheet Specifications

Part number: DMN601VKQ
Manufacturer: DIODES ↗
File Size: 670.97 KB
Datasheet: DMN601VKQ-Diodes.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

* Dual N-Channel MOSFET
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface-Mount Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony F

Applications

* This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:
* General-purpose interfacing switches
* Power-management functions

DMN601VKQ Distributors

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DMN601VK DMN6010SCTB DMN6010SCTBQ DMN6017SFV DMN6017SK3 DMN601DMK

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DMN601VKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Diodes

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