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MMBF170 N-Channel MOSFET

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Description

MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(on) Max 5.0Ω @ VGS = 10V 5.3Ω @ VGS = 4.5V ID Max TA = +25°C 200mA 190mA .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it idea.

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Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* F

Applications

* requiring specific change control (i. e. : parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www. diodes. com/products/automotive/automotiveproducts/.

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