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MMBF0201N Datasheet - Motorola

MMBF0201N - N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF0201N/D Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc dc converters, power management in portable and battery powered products suc.

MMBF0201N Features

* 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN CASE 318

* 07 SOT

* 23 (TO

* 236AB) ISSUE AD Motorola reserves the

MMBF0201N_MotorolaInc.pdf