.
Bruckewell
1295
A1SHB - P-Channel Enhancement Mode Power MOSFET
MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char.
Rectron
452
A19T - P-Channel Enhancement Mode Power MOSFET
RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge .
Advanced Power Electronics
195
AP85T03GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP85T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D.
ROUM
158
20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.
Excelliance MOS
154
B09N03 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S.
Excelliance MOS
152
EMZB08P03V - P-Channel Logic Level Enhancement Mode Field Effect Transistor
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R.
Alpha & Omega Semiconductors
131
AO4712 - N-Channel Enhancement Mode Field Effect Transistor
SRFET TM AO4712 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4712 uses advanced trench technology with a mo.
Silicon Standard
124
60T03H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM60T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S BV DSS R DS(ON) ID 3.
NCE Power Semiconductor
115
NCE8290 - N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology .
Advanced Power Electronics
109
60T03GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP60T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G .
APE
103
85T03GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP85T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D.
NCE Power Semiconductor
95
NCE4688 - N & P-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog.
Feihonltd
88
FHP740 - N-channel enhancement mode power MOS FET
Free Datasheet http://www.datasheet-pdf.com/ FHP740 FHP740 N MOS 。 AC-DC ， DC-DC， HPMW。 ★ ★ ★ 7A,400V,RDS(on)(）0.51Ω 、 （TC =25℃） — TC=2.
HOOYI
83
HY5012W - N-Channel Enhancement Mode MOSFET
HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.
HOOYI
75
HY3215 - N-Channel Enhancement Mode MOSFET
HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.
Excelliance MOS
67
A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100%.
NCE Power Semiconductor
63
NCE82H140 - N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technol.
HUAXUANYANG
60
9435A - -30V P-Channel Enhancement Mode MOSFET
SHENZHEN HUAXUANYANG ELECTRONICS CO.,LTD 9435A -30V P-Channel Enhancement Mode MOSFET General Description: The 9435A is the single P-Channel logic .
UNIKC
58
P1203BV - N-Channel Enhancement Mode MOSFET
P1203BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C .