NCE8290 Datasheet, mosfet equivalent, NCE Power Semiconductor

NCE8290 Features

• Mosfet
• VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ)
• Special process technology for high ESD capability
• High density cell design for ultra low Rdson <

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Part number:

NCE8290

Manufacturer:

NCE Power Semiconductor

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335.59kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide va

NCE8290 Application

• Applications General Features
• VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ)
• Special process technology for high ES

TAGS

NCE8290

NCE Power Semiconductor

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