NCE8290B Datasheet, Mosfet, NCE Power Semiconductor

NCE8290B Features

• Mosfet
• VDS =82V,ID =90A RDS(ON) < 8.8 mΩ @ VGS=10V (Typ:7.5mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE8290B

Manufacturer:

NCE Power Semiconductor

File Size:

354.26kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable fo

NCE8290B Application

• Applications General Features
• VDS =82V,ID =90A RDS(ON) < 8.8 mΩ @ VGS=10V (Typ:7.5mΩ)
• High density cell design for ultra low

TAGS

NCE8290B

NCE Power Semiconductor

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