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HY3810B

N-Channel Enhancement Mode MOSFET

HY3810B Features

* 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V

* 100% avalanche tested

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications

HY3810B General Description

DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications
* Switching application
* Power Management for Inverter Systems. DS G TO-3PS-3L DS G TO-3PM-3S Ordering and Marking Information N-Channel MOSFET P HY3810 YYXXXJWW G PS HY3810 YYXXXJWW G M HY3810 YYXXXJWW G PM HY3810 YYXX.

HY3810B Datasheet (939.05 KB)

Preview of HY3810B PDF

Datasheet Details

Part number:

HY3810B

Manufacturer:

HOOYI

File Size:

939.05 KB

Description:

N-channel enhancement mode mosfet.

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TAGS

HY3810B N-Channel Enhancement Mode MOSFET HOOYI

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