HY3215 Datasheet - HOOYI

HY3215 N-Channel Enhancement Mode MOSFET

HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 150 ±25 175 -55 to 175 120 IDM Pulsed Drain Current ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to.

HY3215-HOOYI.pdf