HY3215PS - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY3215PS, a member of the HY3215 N-Channel Enhancement Mode MOSFET family.

HOOYI

📥 Download Datasheet

Datasheet Details

Part number	HY3215PS
Manufacturer	HOOYI
File Size	759.00 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY3215PS Datasheet
Additional preview pages of the HY3215PS datasheet.

📁 Similar Datasheet

HY3210B - N-Channel 100V MOSFET (VBsemi)
HY3210NA2B - N-Channel Enhancement Mode MOSFET (HUAYI)
HY3210NA2P - N-Channel Enhancement Mode MOSFET (HUAYI)
HY3003D - N-Channel Enhancement Mode MOSFET (HUAYI)
HY3003U - N-Channel Enhancement Mode MOSFET (HUAYI)
HY3003V - N-Channel Enhancement Mode MOSFET (HUAYI)
HY3008MF - N-Channel Enhancement Mode MOSFET (HUAYI)
HY3008PL - N-Channel Enhancement Mode MOSFET (HUAYI)
HY3008PS - N-Channel Enhancement Mode MOSFET (HUAYI)
HY3010 - 1A Power LED Driver (Oristreak)

Other Datasheets by HOOYI

HY3215P - N-Channel Enhancement Mode MOSFET
HY3215PM - N-Channel Enhancement Mode MOSFET
HY3215 - N-Channel Enhancement Mode MOSFET
HY3215B - N-Channel Enhancement Mode MOSFET
HY3215M - N-Channel Enhancement Mode MOSFET
HY3215W - N-Channel Enhancement Mode MOSFET
HY3210B - N-Channel Enhancement Mode MOSFET
HY3210M - N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text

HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 150 ±25 175 -55 to 175 120 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480** 120 84 300 150 0.5 62.5 EAS Avalanche Energy, Single Pulsed L=0.

Published: Aug 19, 2018 |