Datasheet4U Logo Datasheet4U.com

HY3215 - N-Channel Enhancement Mode MOSFET

📥 Download Datasheet

Datasheet Details

Part number HY3215
Manufacturer HOOYI
File Size 759.00 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3215 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 150 ±25 175 -55 to 175 120 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480** 120 84 300 150 0.5 62.5 EAS Avalanche Energy, Single Pulsed L=0.