HY3215P - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY3215P, a member of the HY3215 N-Channel Enhancement Mode MOSFET family.

HOOYI

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Datasheet Details

Part number	HY3215P
Manufacturer	HOOYI
File Size	759.00 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY3215P Datasheet
Additional preview pages of the HY3215P datasheet.

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Full PDF Text Transcription

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 150 ±25 175 -55 to 175 120 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480** 120 84 300 150 0.5 62.5 EAS Avalanche Energy, Single Pulsed L=0.

Published: Aug 19, 2018 |