NCE82H140 Datasheet, mosfet equivalent, NCE Power Semiconductor

NCE82H140 Features

  • Mosfet
  • VDS = 82V,ID =140A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.3mΩ)
  • Special process technology for high ESD capability
  • High density cell design for ultra low Rdson

PDF File Details

Part number:

NCE82H140

Manufacturer:

NCE Power Semiconductor

File Size:

370.84kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE82H140 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

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NCE82H140 Application

  • Applications General Features
  • VDS = 82V,ID =140A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.3mΩ)
  • Special process technology for high ESD

TAGS

NCE82H140
N-Channel
Enhancement
Mode
Power
MOSFET
NCE Power Semiconductor

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