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NCE82H110 - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE82H110
Manufacturer	NCE Power Semiconductor
File Size	330.85 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE82H110-NCEPowerSemiconductor.pdf

NCE82H110 Product details

Description

The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 82V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.9mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

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Published: Jun 2, 2018 |