NCE82H110 Datasheet - NCE Power Semiconductor

NCE82H110, N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE82H110 NCE N-Channel Enhancement Mode Power MOSFET .
The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

* VDS = 82V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.9mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package

NCE82H110-NCEPowerSemiconductor.pdf