NCE82H110 Datasheet - NCE Power Semiconductor

NCE82H110 - N-Channel Enhancement Mode Power MOSFET

NCE82H110 Features

* VDS = 82V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.9mΩ)

* Special process technology for high ESD capability

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package

Datasheet Details

NCE82H110

NCE Power Semiconductor

330.85 KB

N-channel enhancement mode power mosfet.

NCE82H110 Distributor

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