NCE82H110 Datasheet, Mosfet, NCE Power Semiconductor

NCE82H110 Features

• Mosfet
• VDS = 82V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.9mΩ)
• Special process technology for high ESD capability
• High density cell design for ultra low Rdson

PDF File Details

Part number:

NCE82H110

Manufacturer:

NCE Power Semiconductor

File Size:

330.85kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE82H110 Application

• Applications General Features
• VDS = 82V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.9mΩ)
• Special process technology for high ESD

TAGS

NCE82H110

NCE Power Semiconductor

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