MMBF170

N-channel MOSFET

ON Semiconductor

MMBF170 Features

* High Density Cell Design for Low RDS(ON)

* Voltage Controlled Small Signal Switch

* Rugged and Reliable

* High Saturation Current Capability

* These are Pb

* Free Devices DATA SHEET www.onsemi.com BS170 DGS TO

* 92 3 4.825x4.76 CASE 135AN D GS T

MMBF170 General Description

These N

*Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on

*state resistance while provide rugged, reliable, and fast switching performance. They can be used in.

MMBF170 Datasheet (880.96 KB)