MMBF170LT1 Datasheet (Motorola) - TMOS FET Transistor

MMBF170LT1, TMOS FET Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF170LT1/D TMOS FET Transistor N Channel ® 1 GATE DRAIN 3 MMBF170LT1 2 SOURCE 3 1 2 MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 ms) Drain Current Continuous Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 ± 20 ± 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc CASE 318 08, STYLE 21

MMBF170LT1 Features

* N.T., Hong Kong. 852

* 26629298 4 ◊ Motorola Small

* Signal Transistors, FETs and Diodes Device Data

* MMBF170LT1/D