DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

Description

DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max 0.4Ω @ VGS = 4.5V ID TA = 25°C 1A 0.8A .
and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching perform.

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Datasheet Specifications

Part number: DMN2500UFB4
Manufacturer: DIODES ↗
File Size: 115.92 KB
Datasheet: DMN2500UFB4-Diodes.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-low package profile, 0.4mm maximum package heigh

Applications

* This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* DC-DC Converters Power management functions Mechanical Data

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DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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