DMN2501UFB4 Datasheet - Diodes

DMN2501UFB4, N-Channel MOSFET

ADVANCE INFORMATION DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 0.4Ω @ VGS = 4.5V 0.5 Ω @ VGS = 2.5V 0..
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance,.

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Datasheet Details

Part number:

DMN2501UFB4

Manufacturer:

DIODES ↗

File Size:

549.94 KB

Description:

N-Channel MOSFET

Features

* Low On-Resistance
* Very Low Gate Threshold Voltage VGS(TH), 1.0V Max.
* Low Input Capacitance
* Fast Switching Speed
* Ultra-Small Surfaced Mount Package
* Ultra-Low Package Profile, 0.4mm Maximum Package Height
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS

Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* DC-DC Converters
* Power Management Functions Mechanical Data
* Case: X2-DFN1006-3

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DMN2501UFB4 N-Channel MOSFET Diodes

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