DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

Description

DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 3.0Ω @ VGS = 4.5V 20V 6.0Ω @ VGS = 1.8V ID TA = 25°C 240mA 170mA Feat.
and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching perform.

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Datasheet Specifications

Part number: DMN26D0UFB4
Manufacturer: DIODES ↗
File Size: 108.17 KB
Datasheet: DMN26D0UFB4-Diodes.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* N-Channel MOSFET Low On-Resistance:
* 3.0 Ω @ 4.5V
* 4.0 Ω @ 2.5V
* 6.0 Ω @ 1.8V
* 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package, 0.4mm M

Applications

* This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* DC-DC Converters Power management functions

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DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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