* N-Channel MOSFET Low On-Resistance:
* 3.0 Ω @ 4.5V
* 4.0 Ω @ 2.5V
* 6.0 Ω @ 1.8V
* 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package, 0.4mm M
DMN26D0UFB4 Datasheet (108.17 KB)
DMN26D0UFB4
108.17 KB
N-channel enhancement mode mosfet.
DMN26D0UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 3.0Ω @ VGS = 4.5V 20V 6.0Ω @ VGS = 1.8V ID TA = 25°C 240mA 170mA
Feat.
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