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DMN26D0UDJ - DUAL N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power Management Functions

Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance:.
  • 3.0Ω@ 4.5V.
  • 4.0Ω@ 2.5V.
  • 6.0Ω@1.8V.
  • 10Ω@1.5V.
  • Very Low Gate Threshold Voltage, 1.05V Max.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Ultra-Small Surface Mount Package.
  • ESD Protected Gate (HBM 300V).
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: SOT963.
  • Case Material: Molded Plastic, “Green.

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Datasheet preview – DMN26D0UDJ

Datasheet Details

Part number DMN26D0UDJ
Manufacturer Diodes Incorporated
File Size 325.57 KB
Description DUAL N-CHANNEL MOSFET
Datasheet download datasheet DMN26D0UDJ Datasheet
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Full PDF Text Transcription

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NEW PRODUCT DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) 3.0Ω @ VGS= 4.5V 6.0Ω @ VGS= 1.8V ID TA = +25°C 240mA 180mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  DC-DC Converters  Power Management Functions Features  Dual N-Channel MOSFET  Low On-Resistance:  3.0Ω@ 4.5V  4.0Ω@ 2.5V  6.0Ω@1.8V  10Ω@1.5V  Very Low Gate Threshold Voltage, 1.05V Max  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surface Mount Package  ESD Protected Gate (HBM 300V)  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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