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DMN26D0UT - N-CHANNEL ENHANCEMENT MODE MOSFET

Features

  • Low On-Resistance:.
  • 3.0 Ω @ 4.5V.
  • 4.0 Ω @ 2.5V.
  • 6.0 Ω @ 1.8V.
  • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Lead, Halogen, and Antimony Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.

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Full PDF Text Transcription

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DMN26D0UT N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features • Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Lead, Halogen, and Antimony Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • • • Case: SOT-523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
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