• Part: DMN2600UFB
  • Description: 25V N-CHANNEL ENHANCEMENT MODE MOSFET
  • Manufacturer: Diodes Incorporated
  • Size: 124.00 KB
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Datasheet Summary

25V N-CHANNEL ENHANCEMENT MODE MOSFET Features - - - - - - - - Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Ultra-Small Surface Mount Package Lead Free By Design/RoHS pliant (Note 1) "Green" Device (Note 2) ESD Protected Gate 1kV Qualified to AEC-Q101 Standards for High Reliability Mechanical Data - - - - - Case: DFN1006-3 Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) NEW PRODUCT DFN1006-3 Drain ESD PROTECTED TO 1kV Body...