Datasheet Summary
NEW PRODUCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(on)
3.0Ω @ VGS= 4.5V 6.0Ω @ VGS= 1.8V
ID TA = +25°C
240mA
180mA
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- DC-DC Converters
- Power Management Functions
Features
- Dual N-Channel MOSFET
- Low On-Resistance:
- 3.0Ω@ 4.5V
- 4.0Ω@ 2.5V
- 6.0Ω@1.8V
- 10Ω@1.5V
- Very Low Gate Threshold Voltage, 1.05V Max
- Low Input Capacitance
- Fast Switching Speed
- Ultra-Small Surface Mount Package
- ESD Protected Gate...