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DMN26D0UDJ Datasheet DUAL N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  DC-DC Converters  Power Management Functions

Overview

NEW PRODUCT DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) 3.0Ω @ VGS= 4.5V 6.0Ω @ VGS= 1.

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance:.
  • 3.0Ω@ 4.5V.
  • 4.0Ω@ 2.5V.
  • 6.0Ω@1.8V.
  • 10Ω@1.5V.
  • Very Low Gate Threshold Voltage, 1.05V Max.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Ultra-Small Surface Mount Package.
  • ESD Protected Gate (HBM 300V).
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: SOT963.
  • Case Material: Molded Plastic, “Green.