DMN26D0UFB4 Datasheet N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 3.0Ω @ VGS = 4.5V 20V 6.0Ω @ VGS = 1.

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Datasheet Details

Part number	DMN26D0UFB4
Manufacturer	Diodes Incorporated
File Size	108.17 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Download	DMN26D0UFB4 Download (PDF)

General Description

and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• • DC-DC Converters Power management functions • • • • • • • • • Mechanical Data • • • • • • Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe.

Key Features

N-Channel MOSFET Low On-Resistance:.
3.0 Ω @ 4.5V.
4.0 Ω @ 2.5V.
6.0 Ω @ 1.8V.
10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package, 0.4mm Maximum Package Height ESD Protected Gate Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability.

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