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DMN26D0UFB4 - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power management functions

Features

  • N-Channel MOSFET Low On-Resistance:.
  • 3.0 Ω @ 4.5V.
  • 4.0 Ω @ 2.5V.
  • 6.0 Ω @ 1.8V.
  • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package, 0.4mm Maximum Package Height ESD Protected Gate Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription

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DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 3.0Ω @ VGS = 4.5V 20V 6.0Ω @ VGS = 1.8V ID TA = 25°C 240mA 170mA Features and Benefits • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package, 0.
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