Datasheet Summary
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 3.0Ω @ VGS = 4.5V 20V 6.0Ω @ VGS = 1.8V ID TA = 25°C 240mA 170mA
Features and Benefits
- - N-Channel MOSFET Low On-Resistance:
- 3.0 Ω @ 4.5V
- 4.0 Ω @ 2.5V
- 6.0 Ω @ 1.8V
- 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package, 0.4mm Maximum Package Height ESD Protected Gate Lead, Halogen and Antimony Free, RoHS pliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the onstate...