DMN3010LFG N-Channel MOSFET

Diodes

Description

NEW PRODUCT DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) 8.5mΩ @ VGS = 10V 10.5mΩ @ VGS = 4.5V ID T.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal.

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Datasheet Specifications

Part number: DMN3010LFG
Manufacturer: DIODES ↗
File Size: 216.31 KB
Datasheet: DMN3010LFG-Diodes.pdf
Description: N-Channel MOSFET

Features

* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* 100% UIS (Avalanche) rated

DMN3010LFG Distributors

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DMN3010LFG N-Channel MOSFET Diodes

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