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DMN3016LFDE N-Channel MOSFET

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Description

DMN3016LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TA = +25°C 10A 8.5A .
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making i.

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Features

* 0.6mm Profile

Applications

* PCB Footprint of 4mm2
* Low Gate Threshold Voltage
* Low On-Resistance
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For automotive applications requiring specific change control (i. e. parts qualified to AEC-

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