* 100% Unclamped Inductive Switch (UIS) Test in Production
* Low On-Resistance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Description This MOSFET is designed to minimize the on-state resista
DMN3016LK3 Datasheet (440.43 KB)
DMN3016LK3
440.43 KB
N-channel mosfet.
A D VNAEN CWEPDRIONDFUOCRTM A T I O N
DMN3016LK3
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(on)
12mΩ @ VGS = 10V 16mΩ .
📁 Related Datasheet
DMN3016LK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 37.8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Resistance.
DMN3016LDN - Dual N-Channel MOSFET
(Diodes)
ADVANNCEEWD IPNRFOODRUMCATTION
DMN3016LDN
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS N-Channel 30V
RDS(ON) max
20m.
DMN3016LDV - DUAL N-CHANNEL MOSFET
(Diodes)
ADVANCED INFORMATION
DMN3016LDV
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
Product Summary
BVDSS 30V
RDS(ON) max
12mΩ @ VGS = 10V 17mΩ @ V.
DMN3016LFDE - N-Channel MOSFET
(Diodes)
DMN3016LFDE
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V
ID max TA = +25°C
10A
8.5A
.
DMN3016LFDF - N-Channel MOSFET
(Diodes)
ADVANCE INNEFWORPRMOADTIUOCNT
DMN3016LFDF
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4..
DMN3016LPS - N-Channel MOSFET
(Diodes)
ANDEV AWNPNCREEOWIDNPUFRCOOTRDMUACTTI O N
DMN3016LPS
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 30V
RDS(ON) max
12m .
DMN3016LSS - N-Channel MOSFET
(Diodes)
ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT
DMN3016LSS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) max
12mΩ @ VGS = 10V.
DMN3010LFG - N-Channel MOSFET
(Diodes)
NEW PRODUCT
DMN3010LFG
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 30V
RDS(ON)
8.5mΩ @ VGS = 10V 10.5mΩ @ VGS = 4.5V
ID T.
